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CVE-2021-42114

Опубликовано: 16 нояб. 2021
Источник: nvd
CVSS3: 9
CVSS3: 8.3
CVSS2: 7.9
EPSS Низкий

Описание

Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (S

Уязвимые конфигурации

Конфигурация 1

Одновременно

cpe:2.3:o:samsung:ddr4_sdram_firmware:-:*:*:*:*:*:*:*
cpe:2.3:h:samsung:ddr4_sdram:-:*:*:*:*:*:*:*
Конфигурация 2

Одновременно

cpe:2.3:o:samsung:lddr4_firmware:-:*:*:*:*:*:*:*
cpe:2.3:h:samsung:lddr4:-:*:*:*:*:*:*:*
Конфигурация 3

Одновременно

cpe:2.3:o:micron:lddr4_firmware:-:*:*:*:*:*:*:*
cpe:2.3:h:micron:lddr4:-:*:*:*:*:*:*:*
Конфигурация 4

Одновременно

cpe:2.3:o:micron:ddr4_sdram_firmware:-:*:*:*:*:*:*:*
cpe:2.3:h:micron:ddr4_sdram:-:*:*:*:*:*:*:*
Конфигурация 5

Одновременно

cpe:2.3:o:skhynix:ddr4_sdram_firmware:-:*:*:*:*:*:*:*
cpe:2.3:h:skhynix:ddr4_sdram:-:*:*:*:*:*:*:*
Конфигурация 6

Одновременно

cpe:2.3:o:skhynix:lddr4_firmware:-:*:*:*:*:*:*:*
cpe:2.3:h:skhynix:lddr4:-:*:*:*:*:*:*:*

EPSS

Процентиль: 74%
0.0084
Низкий

9 Critical

CVSS3

8.3 High

CVSS3

7.9 High

CVSS2

Дефекты

CWE-20
NVD-CWE-Other

Связанные уязвимости

CVSS3: 8.3
redhat
около 4 лет назад

Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors...

github
около 4 лет назад

Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors...

CVSS3: 9
fstec
около 4 лет назад

Уязвимость внутренней системы защиты целевой строки (TRR) устройства DRAM (PC-DDR4, LPDDR4X), позволяющая нарушителю повысить свои привилегии

EPSS

Процентиль: 74%
0.0084
Низкий

9 Critical

CVSS3

8.3 High

CVSS3

7.9 High

CVSS2

Дефекты

CWE-20
NVD-CWE-Other